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HIVE INF
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ARCHIVE INFORMATION
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RF Device Data
Freescale Semiconductor
MRF19045LR3 MRF19045LSR3
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS
= 0 Vdc, I
D
= 100
μAdc)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
= 26 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 100
μAdc)
VGS(th)
2
?
4
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 550 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 1 Adc)
VDS(on)
?
0.19
0.21
Vdc
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 2 Adc)
gfs
?
4.2
?
S
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Crss
?
1.8
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) 2-carrier N-CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in
1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth.
Common-Source Amplifier Power Gain
(VDD
= 26 Vdc, P
out
= 9.5 W Avg, 2-Carrier N-CDMA,
IDQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
Gps
13
14.5
?
dB
Drain Efficiency
(VDD
= 26 Vdc, P
out
= 9.5 W Avg, 2-Carrier N-CDMA,
IDQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
η
21
23.5
?
%
3rd Order Intermodulation Distortion
(VDD
= 26 Vdc, P
out
= 9.5 W Avg, 2-Carrier N-CDMA,
IDQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz; IM3 Measured in
a 1.2288 MHz Integrated Bandwidth Centered at f1 -2.5 MHz and
f2 +2.5 MHz, Referenced to the Carrier Channel Power)
IM3
?
-37
-35
dBc
Adjacent Channel Power Ratio
(VDD
= 26 Vdc, P
out
= 9.5 W Avg, 2-carrier N-CDMA, I
DQ
= 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz; ACPR measured in a 30 kHz
Integrated Bandwith Centered at f1 -885 kHz and f2 +885 kHz)
ACPR
?
-51
-45
dBc
Input Return Loss
(VDD
= 26 Vdc, P
out
= 9.5 W Avg, 2-Carrier N-CDMA,
IDQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
IRL
?
-16
-9
dB
Pout, 1 dB Compression Point
(VDD
= 26 Vdc, I
DQ
= 550 mA, f = 1930 MHz)
P1dB
?
45
?
W
1. Part is internally matched both on input and output.
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